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features ? no external components except pin diode ? supply-voltage range: 2.7v to 5.5v ? high sensitivity due to automatic sensitiv ity adaption (agc) and automatic strong signal adaption (atc) ? automatic supply voltage adaptation ? high immunity against disturba nces from daylight and lamps ? small size and innovative pad layout ? available for carrier frequencies between 33 khz to 40 khz and 56 khz; adjusted by zener diode fusing 2.5% ? ttl and cmos compatible applications ? home entertainment applications ? home appliances ? remote control equipment 1. description the ic ata2526 is a complete ir receiver for data communication that has been developed and optimized for use in carrier-frequency-modulated transmission applica- tions. the ic combines small size with high sensitivity suppression of noise as caused by daylight and lamps. an innovative and patented pad layout offers unique flexibility for ir receiver module assembly. the ata2526 is available with standard frequencies (33, 36, 37, 38, 40, 56 khz) and 3 different noise suppression regulation types (stan- dard, lamp, short burst), thus covering the requirements of different high-volume remote control solutions (please refer to selection guide available for ata2525/ata2526). the ata2526 operates in a supply voltage range of 2.7v to 5.5v. the function of the ata2526 can be described using the block diagram of figure 1-1 on page 2 . the input stage has two main functions. first it provides a suitable bias voltage for the pin diode. secondly the pulsed photo-current signals are transformed into a voltage by a special circuit which is optimized for low noise applications. after amplification by a controlled gain amplif ier (cga) the signals have to pass a tuned integrated narrow bandpass filter with a center frequency f 0 which is equivalent to the chosen carrier frequency of the input signal. t he demodulator is used first to convert the input burst signal to a digital envel ope output pulse and to evaluate the signal information quality, i.e., unwa nted pulses will be suppressed at the output pin. this is done by means of an integrated dynamic feedback circuit which varies the gain as a function of the present environmental conditions (ambient light, modulated lamps etc.). other features can be used to adapt the device to the individual application to ensure best transmission quality. low-voltage ir receiver assp ata2526 4905f?auto?05/10
2 4905f?auto?05/10 ata2526 figure 1-1. block diagram demodulator input gnd ata2526 carrier frequency f 0 modulated ir signal min 6 or 10 pulses out vs oscillator agc/atc and digital control cga and filter micro- controller in 2. absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions beyond t hose indicated in the operational sections of this specification is not implied. exposure to absolute maximum rati ng conditions for extended periods may affect device reliability . parameter symbol value unit supply voltage v s ?0.3 to +6 v supply current i s 3ma input voltage v in ?0.3 to v s v input dc current at v s = 5v i in 0.75 ma output voltage v o ?0.3 to v s v output current i o 10 ma operating temperature t amb ?25 to +85 c storage temperature t stg ?40 to +125 c power dissipation at t amb = 25c p tot 30 mw
3 4905f?auto?05/10 ata2526 3. electrical characteristics, 3-v operation t amb = ?25c to +85c, v s = 2.7v to 3.3v unless otherwise specified. no. parameters test conditions symbol min. typ. max. unit type* 1 supply 1.1 supply-voltage range v s 2.7 3.0 3.3 v c 1 . 2 supply current i in =0 i s 0.7 0.9 1.3 ma b 2 output 2.1 internal pull-up resistor t amb = 25c see figure 5-10 on page 9 r pu 40 k a 2.2 output voltage low r 2 = 1.4 k see figure 5-10 on page 9 v ol 250 mv b 2.3 output voltage high v oh v s ? 0.25 v s vb 2.4 output current clamping r 2 = 0 see figure 5-10 on page 9 i ocl 8mab 3 input 3.1 input dc current v in = 0 see figure 5-10 on page 9 i in_dcmax ?150 a c 3.2 input dc current see figure 5-3 on page 6 v in = 0; v s = 3v t amb = 25c i in_dcmax ?350 a b 3.3 minimum detection threshold current see figure 5-1 on page 6 test signal: see figure 5-9 on page 9 v s = 3v t amb = 25c, i in_dc =1 a square pp burst n = 16 f = f 0 ; t per = 10 ms see figure 5-8 on page 8 ber = 50 (1) i eemin ?800 pa b 3.4 minimum detection threshold current with ac current disturbance iin_ac100 = 3 a at 100 hz i eemin ?1600 pa c 3.5 maximum detection threshold current with v in > 0v test signal: see figure 5-9 on page 9 v s = 3v, t amb = 25c i in_dc = 1 a square pp burst n = 16 f = f 0 ; t per = 10 ms see figure 5-8 on page 8 ber = 5% (1) i eemax ?200 a d 4 controlled amplifier and filter 4.1 maximum value of variable gain (cga) v s = 3v, t amb = 25c g varmax 50 db d 4.2 minimum value of variable gain (cga) v s = 3v, t amb = 25c g varmin ?6 db d 4.3 total internal amplification (2) v s = 3v, t amb = 25c g max 72 db d 4.4 center frequency fusing accuracy of bandpass v s = 3v, t amb = 25c f 03v_fuse ?2.5 f 0 +2.5 % a *) type means: a =100% tested, b = 100% correlation tested, c = characterized on samples, d = design parameter notes: 1. ber = bit error rate; e.g., ber = 5% means that with p = 20 at the input pin 19...21 pu lses can appear at the pin out 2. after transformation of input current into voltage
4 4905f?auto?05/10 ata2526 4.5 overall accuracy center frequency of bandpass f 03v ?5.5 f 0 +3.5 % c 4.6 overall accuracy center frequency of bandpass t amb = 0 to 70c f 03v ?4.5 f 0 +3.0 % c 4.7 bpf bandwidth ?3 db; f 0 = 38 khz; see figure 5-7 on page 8 b 3.8 khz c 3. electrical characteristics, 3-v operation (continued) t amb = ?25c to +85c, v s = 2.7v to 3.3v unless otherwise specified. no. parameters test conditions symbol min. typ. max. unit type* *) type means: a =100% tested, b = 100% correlation tested, c = characterized on samples, d = design parameter notes: 1. ber = bit error rate; e.g., ber = 5% means that with p = 20 at the input pin 19...21 pu lses can appear at the pin out 2. after transformation of input current into voltage 4. electrical characteristics, 5-v operation t amb = ?25c to +85c, v s = 4.5v to 5.5v unless otherwise specified. no. parameters test conditions symbol min. typ. max. unit type* 5 supply 5.1 supply-voltage range v s 4.5 5.0 5.5 v c 5 . 2 supply current i in =0 i s 0.9 1.2 1.6 ma b 6 output 6.1 internal pull-up resistor t amb = 25c see figure 5-10 on page 9 r pu 40 k a 6.2 output voltage low r 2 = 2.4 k see figure 5-10 on page 9 v ol 250 mv b 6.3 output voltage high v oh v s ? 0.25 v s vb 6.4 output current clamping r 2 = 0 see figure 5-10 on page 9 i ocl 8mab 7 input 7.1 input dc current v in = 0 see figure 5-10 on page 9 i in_dcmax ?400 a c 7.2 input dc current see figure 5-4 on page 7 v in = 0; v s = 5v t amb = 25c i in_dcmax ?700 a b 7.3 minimum detection threshold current see figure 5-2 on page 6 test signal: see figure 5-9 on page 9 v s = 5v t amb = 25c i in_dc = 1 a square pp burst n = 16 f = f 0 ; t per = 10 ms see figure 5-8 on page 8 ber = 50 (1) i eemin ?1000 pa b 7.4 minimum detection threshold current with ac current disturbance iin_ac100 = 3 a at 100 hz i eemin ?2500 pa c *) type means: a =100% tested, b = 100% correlation tested, c = characterized on samples, d = design parameter notes: 1. ber = bit error rate; e.g., ber = 5% means that with p = 20 at the input pin 19...21 pu lses can appear at the pin out 2. after transformation of input current into voltage
5 4905f?auto?05/10 ata2526 4.1 reliability electrical qualification (1000h at 150c) in molded so8 plastic package 7.5 maximum detection threshold current with v in >0v test signal: see figure 5-9 on page 9 v s = 5v, t amb = 25c i in_dc =1a square pp burst n = 16 f = f 0 ; t per = 10 ms see figure 5-8 on page 8 ber = 5% (1) i eemax ?500 a d 8 controlled amplifier and filter 8.1 maximum value of variable gain (cga) v s = 5v, t amb = 25c g varmax 50 db d 8.2 minimum value of variable gain (cga) v s = 5v, t amb = 25c g varmin ?6 db d 8.3 total internal amplification (2) v s = 5v, t amb = 25c g max 72 db d 8.4 resulting center frequency fusing accuracy f 0 fused at v s = 3v v s = 5v, t amb = 25c f 05v f 03v-fuse + 0.5 %c 4. electrical characteristics, 5-v operation (continued) t amb = ?25c to +85c, v s = 4.5v to 5.5v unless otherwise specified. no. parameters test conditions symbol min. typ. max. unit type* *) type means: a =100% tested, b = 100% correlation tested, c = characterized on samples, d = design parameter notes: 1. ber = bit error rate; e.g., ber = 5% means that with p = 20 at the input pin 19...21 pu lses can appear at the pin out 2. after transformation of input current into voltage
6 4905f?auto?05/10 ata2526 5. typical electrical curves at t amb = 25c figure 5-1. i eemin versus i in_dc , v s = 3v figure 5-2. i eemin versus i in_dc , v s = 5v figure 5-3. v in versus i in_dc , v s = 3v 0 1 10 100 i eemin (na) 0 1 1000 100 10 i in_dc (a) v s = 3v f = f 0 0 1 10 100 i eemin (na) 0 1 1000 100 10 i in_dc (a) v s = 5v f = f 0 2.5 0 0.5 1.0 1.5 2.0 3.0 3.5 v in (v) 0 0.1 1000 100 110 i in_dc (a) v s = 3v f = f 0
7 4905f?auto?05/10 ata2526 figure 5-4. v in versus i in_dc , v s = 5v figure 5-5. data transmission rate, v s = 3v figure 5-6. data transmission rate, v s = 5v 2.5 0 0.5 1.0 1.5 2.0 3.0 3.5 v in (v) 0 0.1 1000 100 110 i in_dc (a) v s = 5v f = f 0 4000 3500 2000 0 500 1000 1500 2500 3000 bits/s 60 55 50 45 40 35 30 f 0 (khz) 1333 905 1357 2077 2000 3060 standard type lamp type short burst type 4000 3500 2000 0 500 1000 1500 2500 3000 bits/s 60 55 50 45 40 35 30 f 0 (khz) 1404 2179 3415 952 1479 2317 standard type lamp type short burst type
8 4905f?auto?05/10 ata2526 figure 5-7. typical bandpass curve q = f/f 0 /b; b ?3 db values example: q = 1/(1.047 ? 0.954) = 11 figure 5-8. illustration of used terms, example: f = 33 khz, burst with 16 pulses, 16 periods 1.1 0.8 0.9 0.4 0.5 0.98 1.00 1.04 1.06 1.08 1.02 0.96 0.94 0.92 f/f 0 0.6 0.7 1.0 relative amplitude v s = 3v bandwidth (-3 db) 116 envelope 16 t envelope 1 t gap > t don + t doff 15520 s telegram pause data word data word in out out 485 s 16 ms 33 s (f0 = 33 khz) t doff t ref = 62 ms t don burst (n = 16 pulses) 7 7 7 t per = 970 s t b = 485 s period (p = 16)
9 4905f?auto?05/10 ata2526 figure 5-9. test circuit figure 5-10. application circuit 1 nf 16 u2 dc u1 i in_dc i in v pulse i in_ac100 i ee f 0 i in_dc = u2/40 k r 1 = 220 i ee = u1/400 k t per = 10 ms v dd = 3v to 5v c 1 4.7 f 20 k - + 20 k 1 nf gnd out + ata2526 in vs 400 k = c 2 (2) = 470 pf (10 nf) r 2 (1) > 2.4 k (1) optional (2) the value of c 2 is dimensioned for the short burst type ata2526p7xx. for the other types c 2 can be omitted. in case of an optional resistor r 2 > 2.4 k the value of c 2 must be increased to c 2 = 10 nf. for the other types c 2 = 470 pf is sufficient. 4.7 f c 1 + gnd out microcontroller ata2526 rpu in vs v dd = 3v to 5v
10 4905f?auto?05/10 ata2526 6. chip dimensions figure 6-1. chip size in m note: pad coordinates are given for lower left co rner of the pad in m from the origin 0,0 note: 1. value depends on manufacture location. dimensions length inclusive scribe 1.04 mm width inclusive scribe 1.20 mm thickness 290 5% pads 80 80 fusing pads 60 60 pad metallurgy material alcu/alsiti (1) thickness 0.8 m finish material si 3 n 4 /sio 2 thickness 0.7/0.3 m 0,0 1080,960 scribe width length ata2526 out versioning 393,839 225,496 48,73 666,828 zapping in vs gnd
11 4905f?auto?05/10 ata2526 notes: 1. xx means carrier frequency value (33, 36, 37, 38 or 40 khz and 56 khz) 2. maximum data transmission rate up to bits/s with f 0 = 56 khz, v s = 5v (see figure 5-6 on page 7 ) 7.1 pad layout figure 7-1. pad layout 7. ordering information delivery: unsawn wafers (ddw) in box extended type number d (2) type ata2526s1xx (1) c-ddw 2175 standard type: 10 pulses, high data rate ata2526s3xx (1) c-ddw 1400 lamp type: 10 pulses, enhanced suppression of disturbances, secure data transmission ata2526s7xx (1) c-ddw 3415 short burst type: 6 pulses, highest data rate table 7-1. pin description symbol function out data output vs supply voltage gnd gnd in input pin diode zapping f 0 adjust versioning type adjust gnd in out zapping vs ata2526 pad layout versioning
12 4905f?auto?05/10 ata2526 8. revision history please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this document. revision no. history 4905f-auto-05/10 ? thermal resistance table deleted ? pin columns in electrical characteristics tables deleted 4905e-auto-09/09 ? put datasheet in newest template ? section 8 ?ordering information? on page 12 changed 4905d-auto-10/06 ? features on page 1 changed ? applications on page 1 changed ? section 1 ?description? on page 1 changed ? section 2 ?pin configuration? on page 2 changed ? number 2.2, 3.3 and 3.4 of sectio n 5 ?electrical characteristics, 3-v operation? on pages 3 to 4 changed ? number 73, 7.4 and 8.4 of section 5 ?electrical characteristics, 3-v operation? on page 5 to 6 changed ? section 6.1 ?esd? on page 6 deleted ? figure 7-10 ?application circuit? on page 10 changed ? section 9 ?ordering information? on page 12 changed ? rename figure 9-1 on page 12 4905c-auto-04/06 ? section 9 ?ordering information? on page 12 changed 4905b-auto-04/06 ? put datasheet in a new template ? section 8 ?chip dimensions? on page 11 changed
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